| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ce19430b71009008fafceb8a1b354bbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ac179bcbad17b8ea0260c65f201da92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4eb9421b41ff3c659abf90bde8a53d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efbf9ea1c2405b4613e55e6d336c839b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F24J3-00 |
| filingDate |
2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c66237a6e6ac854f2545b0de917b3e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d68a8c8b5c460cc2229c67bea6ba8169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245b442aceb6d39d1884684aea79ac8f |
| publicationDate |
2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012039786-A1 |
| titleOfInvention |
Silicon Wafer and Method For Producing It |
| abstract |
Silicon wafers having an oxygen concentration of 5·10 17 to 7.5·10 17 cm −3 have the following BMD densities after the following thermal processes, carried out alternatively:n a BMD density of at most 1·10 8 cm −3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·10 9 cm −3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9129919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014078847-A1 |
| priorityDate |
2010-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |