| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94142474b7e5401f2d65136e017693bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ac0dc8efe5d08b1cb65bfc40d96a5ac |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 |
| filingDate |
2011-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e8871502faf826ec422ef42a15c9c45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28575fedad582699f24b218fba915ac3 |
| publicationDate |
2012-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012032165-A1 |
| titleOfInvention |
Aqueous solution composition for fluorine doped metal oxide semiconductor and thin film transistor including the same |
| abstract |
Provided are an aqueous solution composition for fluorine doped metal oxide semiconductor, a method for manufacturing a fluorine doped metal oxide semiconductor using the same, and a thin film transistor including the same. The aqueous solution composition for fluorine doped metal oxide semiconductor includes: a fluorine compound precursor made of one or two or more selected from the group consisting of a metal compound containing fluorine and an organic material containing fluorine; and an aqueous solution containing water or catalyst. The method for manufacturing a fluorine doped metal oxide semiconductor, includes: preparing an aqueous solution composition for fluorine doped metal oxide semiconductor, coating a substrate with the aqueous solution composition; and performing heat treatment on the coated substrate to form the fluorine doped metal oxide semiconductor. The thin film transistor of the present invention can exhibit excellent electrical properties even at a temperature for low-temperature annealing, as compared with the metal oxide semiconductor thin film transistor of the related art. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110172158-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014110714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017054058-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104362098-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106622141-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109638034-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019259610-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015129872-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109095513-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107311657-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081871-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108987468-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368501-B2 |
| priorityDate |
2010-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |