| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a9eab03805d0c1f0b2fd0e67cda98ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_63ada8e2dcee3580859abb7c0cc7b03e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 |
| filingDate |
2011-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2fa9cf014f8867f078416fe219aed49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f914b11c68348a6768c4b88920742ea |
| publicationDate |
2012-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012029219-A1 |
| titleOfInvention |
Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
| abstract |
This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions. |
| priorityDate |
2004-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |