| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e13c109e5fd75db775d35215a11921c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b6bf350aad7e03c7e07477b805106d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2011-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9ac22cc0d24e5e0d47fe6d9e83af90c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb2c3bfabe341b7c89dd8ed4d7036b9f |
| publicationDate |
2012-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012025395-A1 |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO 2 skeleton; a second porous layer that is formed immediately above the first porous layer and includes a SiO 2 skeleton; a via wiring that is provided in the first porous layer; and a trench wiring that is buried in the second porous layer. The first porous layer has a pore density x 1 of 40% or below and the second porous layer has a pore density x 2 of (x 1 +5) % or above. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106941092-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406615-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332836-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9842804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887161-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015179578-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194253-A1 |
| priorityDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |