| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c21a8d0cdb379e761c659cde36ced46e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_154e62b73d2c4d15ee981bcc2afbc709
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-166 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 |
| filingDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a07d071964d60a44aafe83c844fdc5c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d82bc7f7a50a72cf48837d4f3c61e7d8 |
| publicationDate |
2012-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012012825-A1 |
| titleOfInvention |
Thin film transistor and method for producing the same |
| abstract |
The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8395147-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012199836-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017017620-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220850-A1 |
| priorityDate |
2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |