| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3f6138aa23a89f5e0143c6802c63a96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f80afcd35db55b0ddd4af0490bb5aee0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ff95c7a65c262918b0d1fdab1f38899b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_349b7834b8b59096294c0955d34bf2e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a672b990a5ae3d4fbf7cceae99d4a557 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03921
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03687 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5a5fb9c6ca211d985aec63f6603b433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a748d77a68a3c8354c08cfee90cc2d95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc0cf805bb2d276b1353f99c20f892c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61ea1539aa51cfcb2bbde20f0b8600c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_624d32addf5c2efc4ca4bc988ffa65aa |
| publicationDate |
2012-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012012167-A1 |
| titleOfInvention |
Solar cell employing an enhanced free hole density p-doped material and methods for forming the same |
| abstract |
A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H 2 and the inert gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013321905-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013019929-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9634164-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214577-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013224899-A1 |
| priorityDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |