Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1feb5097a5d4bb2ffbb5b064cc005eb2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70fa74a7d65580289761fd31113fe921 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3ba389767b102c29b8e5def9d576223 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12 |
filingDate |
2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde05e3e5b7dd033ec7c5e95d110aeab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d64a53678f8ddb38ff025a9c4f7e99f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07d6662600eb9f8f493239df17716eb3 |
publicationDate |
2012-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2012012049-A1 |
titleOfInvention |
Hvpe chamber |
abstract |
Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9404181-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103966574-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103966574-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013125815-A1 |
priorityDate |
2010-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |