| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa72ddaa2d3038ff04d466b6ad2d253c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad7feec924bf9985260826178850f0cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_808e9a94f164ee491845f0009d1b9171 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2011-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4932be2a5ef3a28ee815916072592bf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44e7fb8ff08b9a19bec7249a4e439720
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fc4f3a205a6f55c390ae9f44ffb6d28 |
| publicationDate |
2011-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011318937-A1 |
| titleOfInvention |
Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus |
| abstract |
A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165497-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9704703-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11725276-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022298628-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9218959-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013252434-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022081764-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11618947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013252435-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015153956-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865451-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104120405-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9460916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9587308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102022114717-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685317-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015000695-A1 |
| priorityDate |
2010-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |