| abstract |
A semiconductor device includes a substrate, an NMOSFET and a PMOSFET disposed on the substrate, a first stress nitride layer pattern having a tensile stress and disposed On the NMOSFET, an interface oxynitride layer pattern having a first compressive stress and disposed on the PMOSFET and a second stress nitride layer pattern disposed on the interface oxynitride layer pattern and having a second compressive stress whose magnitude is greater than the magnitude of the first compressive stress. |