| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec7634a23b4b9de29f42e192b1aa9548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05e0a3da3bba0df465a2239d9fac8c5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7128c861058253929503d90c97b4c4ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02 |
| filingDate |
2011-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da1eae47435f622404ab405c2fee7179
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa16058c561ccacad48b9aac49d1ef7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4481f880c7373fc02b860afc1bbce93e |
| publicationDate |
2011-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011308582-A1 |
| titleOfInvention |
Photoelectric conversion device and manufacturning method thereof |
| abstract |
A photoelectric conversion device with a novel anti-reflection structure is provided. An uneven structure is formed on a surface of a semiconductor by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided for a light incident plane side of the photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076909-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159793-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9397245-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569098-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772770-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9112086-B2 |
| priorityDate |
2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |