| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d46e487226cfde3b423a3e88fc060df4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ce827dcd4608d9f1b47eac5ef6576a74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_468beca622d6be565d0fcd1a0b4f97b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb8b7b5a6b6d23434d742cc7fe49a35f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24372 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-02 |
| filingDate |
2011-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6095ee9f12c88cf33d36c30a99bb67c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de0fa513a19721f4966ba72406c0b4c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5dea9554dae10efadc0f5299029440a |
| publicationDate |
2011-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011293890-A1 |
| titleOfInvention |
Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers |
| abstract |
Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019264348-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021174137-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10822722-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11608569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020190696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115279953-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11680340-B2 |
| priorityDate |
2007-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |