http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011272757-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 |
| filingDate | 2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23552713edfcde9305d838f5edd2fde8 |
| publicationDate | 2011-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011272757-A1 |
| titleOfInvention | Semiconductor device and a method of manufacturing the same |
| abstract | To improve characteristics of a semiconductor device having a nonvolatile memory. n There is provided a semiconductor device having a nonvolatile memory cell that performs memory operations by transferring a charge to/from a charge storage film, wherein the nonvolatile memory cell includes a p well formed in a principal plane of a silicon substrate, and a memory gate electrode formed over the principal plane across the charge storage film, and wherein a memory channel region located beneath the charge storage film of the principal plane of the silicon substrate contains fluorine. |
| priorityDate | 2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.