http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011272008-A1

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filingDate 2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011272008-A1
titleOfInvention Oxide nitride stack for backside reflector of solar cell
abstract Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×10 11 Coulombs/cm 2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.
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