http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011244760-A1

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filingDate 2011-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c0eafb8d1413bed40297955439887ab
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publicationDate 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011244760-A1
titleOfInvention Method for polishing a semiconductor wafer
abstract A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO 2 with an average grain size in a range of 0.1 to 1.0 μm. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.
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priorityDate 2010-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.