http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011244681-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2648e65ad8850515bd727a122f1186 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2009-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50fe737ace905461592f2ec1c05f6815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bdc0e10c543ef3e60e0a118364487fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f4ca707a149b02c1cf479631b2210f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcda89ea6bd34e6beed8c6ab10fbac44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_343e2b0b453e4d80a7cb1db1b5ffed04 |
| publicationDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011244681-A1 |
| titleOfInvention | Method of forming a tantalum-containing layer on a substrate |
| abstract | A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of:n a) providing a vapor comprising at least one precursor compound of the formula Cp(R 1 ) m Ta(NR 2 2 ) 2 (═NR 3 ) (I): nn n n n n n n n n n wherein:n R 1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R 2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R 3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113943321-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010055310-A1 |
| priorityDate | 2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.