| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf83328d853bc7476ca10212837b3a01 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2011-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5073733321786ff15f3c50de398ed283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a553c5b22ea63b4943bde365fd6183f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94cf00c93d5ff053847a1d49569041e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5703c74d40a0cd667c10e49624439dbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0a5f6b97bd4c63efae0ea4ae705cb43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f9222ee832f01f92df1189e7a4caf3f |
| publicationDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011237072-A1 |
| titleOfInvention |
Integrated circuit system with through silicon via and method of manufacture thereof |
| abstract |
A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer. |
| priorityDate |
2009-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |