http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011237010-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate | 2011-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f83d9f191114acc87407b3279332f7b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5b2babcbaa0f0c293fd4f42fe256af6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c7cfe07cac6a3f3a23203ae1a035396 |
| publicationDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011237010-A1 |
| titleOfInvention | Thin film transistor array substrate and method fabricating the same |
| abstract | A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014332760-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10660720-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9023683-B2 |
| priorityDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.