http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011235389-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-12 |
| filingDate | 2011-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa07e0c99c24a951a9ae29a1ca0eb12f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_598e7504717c4325e148358d866e9309 |
| publicationDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011235389-A1 |
| titleOfInvention | Semiconductor device |
| abstract | An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014183541-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113345865-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9478704-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159746-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002580-B2 |
| priorityDate | 2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.