http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011229707-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a68367dad38e62404c609aef23ea8a72 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249979 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate | 2011-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ac8c97059cb0c82758e03d4c106f795 |
| publicationDate | 2011-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011229707-A1 |
| titleOfInvention | Method of manufacturing single crystal ingot and wafer manufactured by thereby |
| abstract | A method of manufacturing single crystal ingot and a wafer manufactured thereby are provided. The method includes pulling and growing an ingot in a crucible; and cooling the ingot, wherein during the pulling of the ingot, a pulling rate of the ingot is configured to generate a vacancy of less than 80 nm; when the ingot is cooled at an interval of about 1000 to about 2000, a cooling speed of the ingot is slow cooling to allow the vacancy of less than about 80 nm to grow into a vacancy of more than about 80 nm. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109537045-A |
| priorityDate | 2010-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.