http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011215672-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0072
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N1-00
filingDate 2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2afe779a2c971e02cf48866c76f50d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12be4aa41846a88cd8dc6e070a3a975d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6db2ef2af5d5a54801e90ac28381ede6
publicationDate 2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011215672-A1
titleOfInvention Mems device
abstract A MEMS device includes: a semiconductor substrate; a vibrating film formed on the semiconductor substrate with a restraining portion interposed between the vibrating film and the semiconductor substrate, and including a lower electrode, and a fixed film formed on the semiconductor substrate with a support portion interposed between the fixed film and the semiconductor substrate to cover the vibrating film, and including an upper electrode. A gap formed between the vibrating film and the fixed film opposed to each other forms an air gap. The restraining portion provides partial coupling between the semiconductor substrate and the vibrating film, and the vibrating film has a multilayer structure in which the lower electrode and a compressive stress inducing insulating film are laminated. The insulating film is located within the perimeter of the lower electrode.
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priorityDate 2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 39.