http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011212606-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2011-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1824f00a32e740807a246e592c4ad8eb |
| publicationDate | 2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011212606-A1 |
| titleOfInvention | Method of Fabricating Thin Film Transistor Structure |
| abstract | A method of fabricating a thin film transistor (TFT) is provided. The method comprises the steps of providing a substrate with a gate electrode formed thereon; forming an insulating layer on the substrate and covering the gate electrode; forming an intrinsic amorphous silicon layer (intrinsic a-Si layer) on the insulating layer; forming an etch-stop layer on the intrinsic amorphous silicon layer, and the etch-stop layer positioned correspondingly to the gate electrode; treating the etch-stop layer to form an oxide layer, and the oxide layer covering the etch-stop layer; forming a n+ a-Si layer above the intrinsic amorphous silicon layer, and the n+ a-Si layer covering partial surface of the etch-stop layer and the oxide layer separating a sidewall of the etch-stop layer and the n+ a-Si layer; and forming a conductive layer on the n+ a-Si layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017170309-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105097944-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217707-B2 |
| priorityDate | 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.