http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011204517-A1

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publicationDate 2011-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011204517-A1
titleOfInvention Semiconductor Device with Vias Having More Than One Material
abstract A semiconductor die includes a via within a substrate material of the semiconductor die. The via includes a first conductive material having a first Coefficient of Thermal Expansion (CTE) and a second conductive material between the first conductive material and the substrate material of the semiconductor die. The second conductive material has a second CTE between the first CTE and a CTE of the substrate material of the semiconductor die. The first conductive material can be copper. The second conductive material can be tungsten and/or nickel. The substrate material can be silicon.
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