http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011200949-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2011-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3da1217b6fb7e3f366234331a1153df0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cff5d15ecd118036220907bd07c298e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecb1c4f97070ba545344d715e0b94007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9bdb82e3169de7bde084501077cb12c |
| publicationDate | 2011-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011200949-A1 |
| titleOfInvention | Substrate processing method |
| abstract | A substrate processing method includes a first process (step S 12 to step S 16 ) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S 17 to step S 20 ) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S 16 ) and a line width of the second resist pattern, and the first process (step S 16 ) is performed on the substrate under the determined first processing condition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11256180-B2 |
| priorityDate | 2010-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.