| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59bc4487c8f6f2f733f3316d4e632df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52de0d49eb322d5c5a38920ace7977fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63ca43f5a401d4b776be8555f3358475 |
| publicationDate |
2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011193162-A1 |
| titleOfInvention |
Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain |
| abstract |
A method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) transistor includes forming a dummy gate over a substrate. A source and a drain are formed over the substrate on opposite sides of the dummy gate. A first silicide is formed on the source. A second silicide is formed on the drain so that an unsilicided region of at least one of the drain or the source is adjacent to the dummy gate. The unsilicided region of the drain provides a resistive region capable of sustaining a voltage load suitable for a high voltage LDMOS application. A replacement gate process is performed on the dummy gate to form a gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8664103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324716-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804158-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9087886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013341713-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9396953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614089-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012315749-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I498969-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013299920-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015262823-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483398-B2 |
| priorityDate |
2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |