http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011193087-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105 |
| filingDate | 2011-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecc56225ff0f75708fc0e7facd0b8e07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3ac87803e9af4411fce7c8ed58c311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_388d79f2f983e6aafd28690d0766ab9f |
| publicationDate | 2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011193087-A1 |
| titleOfInvention | Photoelectric Conversion Device and Method for Manufacturing the Same |
| abstract | To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009293954-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009277504-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8410354-B2 |
| priorityDate | 2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 161.