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publicationNumber US-2011189837-A1
titleOfInvention Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment
abstract A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
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