http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011180807-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86e3fdfb690314e605bc56655fdf219b |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035209 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028 |
filingDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_841c47480ce68d1d388e8ebf8581fb83 |
publicationDate | 2011-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2011180807-A1 |
titleOfInvention | Infrared external photoemissive detector |
abstract | An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony. |
priorityDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.