| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D5-12 |
| filingDate |
2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7f61dac0b82b38a45582a199404bbc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1d9c4131c6df15f710a6dc037df6028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_434905f8f8d4ef975a193b60975248ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f34bf450ffd70f5148b6f16dc1567f41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a32afad5177e90dd835b5902eed943db |
| publicationDate |
2011-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011162874-A1 |
| titleOfInvention |
SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES |
| abstract |
An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020219759-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014131874-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017301620-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014210089-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163770-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018222680-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I648838-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380617-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015206798-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107758-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067194-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9953911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I550715-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11715681-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510648-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332916-B2 |
| priorityDate |
2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |