| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80e388d07cba4b8311e783e720f2432a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052fccba61abb79b2771fdf647c20dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1acde0fb08d4481b62afdf8e4862680
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bdceeb2c980f50f30cd698df762bf2f |
| publicationDate |
2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011147817-A1 |
| titleOfInvention |
Semiconductor component having an oxide layer |
| abstract |
Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide layer form a second semiconductor-oxide interface. The oxide layer has a chlorine concentration, the chlorine concentration having a first maximum in the region of the first semiconductor-oxide interface, and having a second maximum in the region of the second semiconductor-oxide interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705328-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I796599-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022216053-A1 |
| priorityDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |