http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011146726-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696ca0ae93d5cf5a686273601361781f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-00 |
| filingDate | 2009-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2579176f36b6d5d3999ef621d14eb582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d57412aec682efd233c246c3359e64d |
| publicationDate | 2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011146726-A1 |
| titleOfInvention | Process for cleaning semiconductor element |
| abstract | In a wiring formation process for a semiconductor device, the resist residue forming in dry etching with a reactive gas and aching with a plasma gas is removed, not corroding the members of the semiconductor device such as the interlayer insulating material and the wiring material thereof, and the device is protected from after-corrosion to occur after left for a given period of time after the treatment. n According to a method comprising (1) washing step with an aqueous solution containing hydrofluoric acid, (2) a washing step with a mixed solution of ammonia and hydrogen peroxide, and (3) a washing step with hydrogen peroxide water, the resist residue on the side wall of a metal wiring that comprises aluminium (Al) as the main ingredient thereof is removed, and occurrence of after-corrosion is prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103894362-A |
| priorityDate | 2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.