http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011143091-A1

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filingDate 2009-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecaf25b9e6a27e905c9b80fafdfd0b10
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publicationDate 2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011143091-A1
titleOfInvention Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
abstract Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.
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