Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9cb217f83556ce2a418344c2d485415 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1c2f49c4a5ee6c388428e725a3d5b20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f708f49e9e89eb2d377058d7326c1f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-36 |
filingDate |
2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12b70605cdf7f5df4e768c7ea8151c2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b954415ddb5bb399a28e8c561c649cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73f37fa141a66e33f97d324554950d18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0349bef19e646c3464960fb004e4069e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b1894625a2674c17067f023aad7f38a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d3cd39df72b7f0b976b6a36c6c87e5 |
publicationDate |
2011-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2011127075-A1 |
titleOfInvention |
Interlayer insulating film, wiring structure, and methods of manufacturing the same |
abstract |
An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH 3 ) n SiO 2-n/2 ) x (SiO 2 ) 1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261510-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014016283-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453751-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9042120-B2 |
priorityDate |
2007-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |