| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a4740803d7bdd2c79584a101d1f8941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18c51a05c946ceb7a1f1c351689fb23e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24ba129a4433fe5830a7f5eea24d88df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b9f84b1eab838dceec0bd0a136b5753 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0256 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate |
2010-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1642d8801bab404d884b1f5fffb89dea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f91cc23daa516176fee1c987ebd969db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_169b4d41ae9c2c01e67e27b304d0167f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e752e8f085baae7c7d1d95b91e80a29 |
| publicationDate |
2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011121424-A1 |
| titleOfInvention |
Low oxygen content semiconductor material for surface enhanced photonic devices and associated methods |
| abstract |
Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation-absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C. to about 1100° C., wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment. |
| priorityDate |
2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |