| abstract |
To provide a technology capable of improving the property of an MRAM in a semiconductor device containing the MRAM. n A plasma treatment is performed on the surface of an interlayer insulating film for which a wiring and a digit line are formed. Firstly, a semiconductor substrate is carried in a chamber, and a mixed gas that includes molecules containing nitrogen (ammonia gas) and inert molecules not containing nitrogen (hydrogen gas, helium, argon) is introduced into the chamber. On this occasion, the plasma treatment is performed by introducing the mixed gas under such a condition that the flow rate of the inert molecules not containing nitrogen is larger than that of the molecules containing nitrogen, and the mixed gas is turned into a plasma. |