| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f74485007f8ea25f8b0df3465ebe8f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_feed45d35619739e003e0fb94153c156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04fc681ec8803b2d97d5ba7fe026dd42 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0756 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F2-02 |
| filingDate |
2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd9a41cee2d96359de9fda80d97fc535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f30bcb0c68c5a8112abe26ee5329dc14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390c04a8b39a205407d341b236f5495b |
| publicationDate |
2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011101403-A1 |
| titleOfInvention |
Semiconductor light converting construction |
| abstract |
Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8748911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8461608-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013036346-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011108858-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011101382-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11393949-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11233179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111162108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8975614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468562-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011140129-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011172292-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013028366-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013036346-A3 |
| priorityDate |
2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |