| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c124c65001816852556f0eae371c723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c077e751be61edae77e414e4e2fa07a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a39998b2b037814a685beac8b092bf3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fb96a2a2d7b46c69a5622e88d0e273b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5742e4e503d0218da23229607e7b3da4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b667300528874a48e3727f0782fc5f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_950e10275f7b5844a666efb34d7f4d67 |
| publicationDate |
2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011079846-A1 |
| titleOfInvention |
High voltage devices, systems, and methods for forming the high voltage devices |
| abstract |
A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012049278-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015325697-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012228705-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018505552-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015061011-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8552497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108365009-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013093482-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014008724-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8603915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9034711-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466715-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013004687-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10366978-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653459-B2 |
| priorityDate |
2009-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |