| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70bfc3aa4aa5e54d57f0fa947f3f6c36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85da8241e3272ed7f8bbe74222dd809f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d3b3964e41499b2c5c71cc4a613944d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d94b733642e6c48603ca67dc0ff90cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2010-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8e8a9f55db99055ff6b6f83076f567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f904205dca4db2b03e1fa161df825f8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e012aa9e9ec8fa7e2299e8dd789f772c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd479a97a64e2c623cfe5f575c1c1eab |
| publicationDate |
2011-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011070730-A1 |
| titleOfInvention |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| abstract |
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process. |
| priorityDate |
2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |