| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2010-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37cda4a1393583b20be8cdf7c43c3e8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee87bfa7d21ce4d78c835d1fa837ea9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_878fde7f325488a387b040432a821050 |
| publicationDate |
2011-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011049638-A1 |
| titleOfInvention |
Structure for high voltage device and corresponding integration process |
| abstract |
An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a plurality of column structures are realized, which column structures comprises high aspect ratio deep trenches, said epitaxial layer being in turn covered by an active surface area wherein said high voltage device is realized, each of the column structures comprising at least an external portion being in turn realized by a silicon epitaxial layer of a second type of conductivity, opposed than said first type of conductivity and having a dopant charge which counterbalances the dopant charge being in said epitaxial layer outside said column structures, as well as a dielectric filling portion which is realized inside said external portion in order to completely fill said deep trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9558986-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016163787-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015076660-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536941-B2 |
| priorityDate |
2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |