| abstract |
Methods for forming a dielectric layer on a substrate are provided herein. In some embodiments a method for forming a dielectric layer on a substrate may include exposing the substrate to a first source gas comprising a silicon (Si) precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen; and exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, where in the first layer and the second layer form the dielectric layer. |