| abstract |
There are provided a method for manufacturing a Si (1-v-w-x) C w Al x N v substrate having a reduced number of cracks and high processibility, a method for manufacturing an epitaxial wafer, a Si (1-v-w-x) C w Al x N v substrate, and an epitaxial wafer. n A method for manufacturing a Si (1-v-w-x) C w Al x N v substrate 10 a includes the following steps. First, a Si substrate 11 is prepared. A Si (1-v-w-x) C w Al x N v layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate at a temperature below 550° C. |