| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_428cf517508ecb7bea6f408fc9b82953 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate |
2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0a11a88aa58aecc1a9ae4176dd4359f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_333ff2439e7c10aa7fecdb129c6a1fe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fc453368c756dcc2dc56c7f0c27ea8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_916a1bb9111add8746fe131276fb9ad0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9729ecc5c1ed597b69880b77b69ba8c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f6c0ace24eac5707144489ce48ba514 |
| publicationDate |
2011-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011033965-A1 |
| titleOfInvention |
Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
| abstract |
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104064639-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102623589-A |
| priorityDate |
2006-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |