| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbb477cab6287ad715ceb612f63441ba |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bea7f145055928c980858ddbd35e1f1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73fcdcb4d8e28c8ebbb5cbe30f06d6f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11c75bfc179a059c68647a80321d88ae |
| publicationDate |
2011-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011001115-A1 |
| titleOfInvention |
Resistive ram devices for programmable logic devices |
| abstract |
A resistive random access memory device formed on a semiconductor substrate comprises an interlayer dielectric having a via formed therethrough. A chemical-mechanical-polishing stop layer is formed over the interlayer dielectric. A barrier metal liner lines walls of the via. A conductive plug is formed in the via. A first barrier metal layer is formed over the chemical-mechanical-polishing stop layer and in electrical contact with the conductive plug. A dielectric layer is formed over the first barrier metal layer. An ion source layer is formed over the dielectric layer. A dielectric barrier layer is formed over the ion source layer, and includes a via formed therethrough communicating with the ion source layer. A second barrier metal layer is formed over the dielectric barrier layer and in electrical contact with the ion source layer. A metal interconnect layer is formed over the barrier metal layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011205780-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10270451-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10855286-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059705-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8581346-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013019678-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103839958-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128852-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8120955-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014131653-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11068620-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011012081-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8331130-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7929345-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010157688-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010208520-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9729155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10147485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2737628-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056907-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013019678-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256822-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8823415-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8269204-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10650890-B2 |
| priorityDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |