| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2010-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_813e0e460b2bf852de31d8762bc4b614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0f62ea42c504a787e4e77689c964a31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a1fe9ead439503816b839fc3b440b1a |
| publicationDate |
2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010310988-A1 |
| titleOfInvention |
Resist pattern-forming method and resist pattern miniaturizing resin composition |
| abstract |
A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010297552-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I459144-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8247164-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8211624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011111342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9422376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010190104-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017018596-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956790-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015079506-A1 |
| priorityDate |
2008-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |