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filingDate 2010-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010303115-A1
titleOfInvention Method for manufacturing semiconductor laser diode
abstract A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF 4 and O 2 , where CF 4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF 4 and O 2 , where CF 4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF 4 and O 2 , where CF 4 in this step has the third partial pressure greater than the second partial pressure.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9223088-B2
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