| abstract |
Provided is an organic semiconductor device, suitable for the integration, including an organic thin film transistor of low voltage drive and high driving current. n The organic semiconductor device including an organic thin film transistor comprising: a substrate ( 10 ); a gate electrode ( 12 ) disposed on the substrate ( 10 ); a first gate insulating film ( 15 ) disposed on the gate electrode ( 12 ); a second gate insulating film ( 17 ) disposed on the first gate insulating film ( 15 ); a source electrode ( 16, 20 ) and a drain electrode ( 18, 22 ) disposed on the second gate insulating film ( 17 ) and composed of a layered structure of a first metal layer ( 16, 18 ) and a second metal layer ( 20, 22 ); and an organic semiconductor layer ( 24 ) disposed on the gate insulating film ( 17 ) and between the source electrode ( 16, 20 ) and the drain electrode ( 18, 22 ). The first gate insulating film ( 15 ) is composed of an insulating film having a dielectric constant higher than that of the second gate insulating film ( 17 ), and the second gate insulating film ( 17 ) is composed of a silicon dioxide film thinner than the first gate insulating film ( 15 ), thereby providing a laminated type gate insulating film structure as a whole. |