| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb4ee28d43b5e8d4a3c5141fa9bcfeb0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F120-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2008-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c2aea784421b1417268808cee95da9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cf4409c63c17dcbc3e4bbe9b7b7ba2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66e1eec48075793a266a369282eb1b21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67b7ef4e85229771c75657a052debcd7 |
| publicationDate |
2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010297564-A1 |
| titleOfInvention |
Polymerizable fluorine-containing monomer, fluorine-containing polymer and method of forming resist pattern |
| abstract |
A polymerizable fluorine-containing monomer and a fluorine-containing polymer which are suitable for a resist layer and a protective layer of a laminated resist for forming a fine pattern in production of semiconductor devices, and further are useful especially in immersion lithography using water as a liquid medium, and a method of forming a resist pattern are provided. The polymerizable fluorine-containing monomer is represented by the formula (1): n n n n n n n n n n wherein R 1 is hydrogen atom or a monovalent saturated or unsaturated hydrocarbon group of 1 to 15 carbon atoms, and the hydrocarbon group may be chain or cyclic structure and may have oxygen atom, nitrogen atom, sulfur atom or halogen atom, the polymer is a homopolymer or copolymer of the monomer, and the method of forming a resist pattern using such a homopolymer or copolymer is carried out by immersion lithography. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11597696-B2 |
| priorityDate |
2008-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |