http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010295039-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49308e8718b2bc5be941bc5b7a1d2443
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
filingDate 2010-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0ab0ef17819817141b7d38e7285f6d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9619548af4eea98f543a86160afdef1
publicationDate 2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010295039-A1
titleOfInvention Method for growing zinc-oxide-based semiconductor device and method for manufacturing semiconductor light emitting device
abstract A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013269600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3492626-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2641996-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010295040-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10297446-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8502219-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059077-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014231830-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108767088-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11427499-B2
priorityDate 2009-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6624441-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267063-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010230671-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010295040-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004296821-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006170013-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267062-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57180004
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129131459
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID136083475
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128047203
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6061
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5976

Total number of triples: 41.