| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4fbb9f9bd1150b98e1777cbaff9180b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc517a3e78e5ce6a4b58b438f666d713 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3245 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2009-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_270ff0a0d0e98f29b72f815225757381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1440a365794f9354bedd1f57d1156fe8 |
| publicationDate |
2010-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010291772-A1 |
| titleOfInvention |
Semiconductor Manufacturing Method |
| abstract |
The present invention discloses a semiconductor manufacturing method. The method for activating a p-type impurity doped in a semiconductor element in a chamber comprises that a vacuum pressure is exerted to the chamber first, and the semiconductor element is heated to a preset temperature and the heating is persisted for a preset period to activate the p-type impurity doped in the semiconductor element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018101771-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11056612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10505072-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173463-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3336907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011177628-A1 |
| priorityDate |
2009-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |