http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010291753-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate | 2010-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a15eecd95607c31abd5f1c24c226dd30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e0ae01e2bc0bcab67024c29f341b739 |
publicationDate | 2010-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2010291753-A1 |
titleOfInvention | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
abstract | A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9242444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016372361-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887124-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011256730-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014014029-A1 |
priorityDate | 2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.