| abstract |
A method of forming an integrated silicon voltage regulator (ISVR) comprises providing a nano-encapsulated magnetic particle (NEMP) suspension, depositing a first layer of the NEMP suspension on an integrated circuit (IC) device, curing the first layer of the NEMP suspension to form a first NEMP composite layer, forming at least one inductor wire on the NEMP composite layer, depositing an interlayer dielectric material over the inductor wire, depositing a second layer of the NEMP suspension on the interlayer dielectric material, and curing the second layer of the NEMP suspension to form a second NEMP composite layer. |